VS-MURB1020CTHM3, vs-murb1020ct-1hm3 www.vishay.com vishay semiconductors revision: 02-feb-16 1 document number: 95807 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ultrafast rectifier, 2 x 5 a fred pt ? features ? ultrafast recovery time ? low forward voltage drop ? low leakage current ? 175 c operating junction temperature ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? aec-q101 qualified ? meets jesd 201 class 1 whisker test ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 description / applications mur.. series are the state of the art ultrafast recovery rectifiers specifically design ed with optimized performance of forward voltage drop and ultrafast recovery time. ? the planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. ? these devices are intended for use in the output rectification stage of smps, ups, dc/d c converters as well as freewheeling diode in low voltage inverters and chopper motor drives. ? their extremely optimized stored charge and low recovery current minimize the switch ing losses and reduce over dissipation in the switch ing element and snubbers. product summary package to-263ab (d 2 pak), to-262aa i f(av) 2 x 5 a v r 200 v v f at i f 0.87 t rr (typ.) 19 ns t j max. 175 c diode variation common cathode to-262aa to-263ab (d 2 pak) ba s e common cathode common cathode anode 1 anode 2 2 12 3 ba s e common cathode common cathode anode 1 anode 2 2 12 3 v s -murb1020cthm 3 v s -murb1020ct-1hm 3 absolute maximum ratings parameter symbol test conditions max. units peak repetitive reverse voltage v rrm 200 v average rectified forward current per leg i f(av) 5 a total device rated v r , t c = 149 c 10 non-repetitive peak surge current per leg i fsm 50 peak repetitive forward current per leg i fm rated v r , square wave, 20 khz, t c = 149 c 10 operating junction and storage temperatures t j , t stg -65 to +175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units breakdown voltage, ? blocking voltage v br , v r i r = 100 a 200 - - v forward voltage v f i f = 5 a, t j = 25 c - 0.99 1.08 i f = 5 a, t j = 125 c - 0.87 0.99 i f = 10 a, t j = 25 c - 1.12 1.25 i f = 10 a, t j = 125 c - 1.02 1.20 reverse leakage current i r v r = v r rated - - 10 a t j = 150 c, v r = v r rated - - 250 junction capacitance c t v r = 200 v - 8 - pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh
VS-MURB1020CTHM3, vs-murb1020ct-1hm3 www.vishay.com vishay semiconductors revision: 02-feb-16 2 document number: 95807 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 100 a/s, v r = 30 v - 19 - ns t j = 25 c i f = 5 a ? di f /dt = 200 a/s ? v r = 160 v -24- t j = 125 c - 35 - peak recovery current i rrm t j = 25 c - 3.3 - a t j = 125 c - 5.0 - reverse recovery charge q rr t j = 25 c - 33 - nc t j = 125 c - 76 - thermal - mechanical specifications parameter symbol test conditions min. typ. max. units maximum junction and storage ? temperature range t j , t stg -65 - 175 c thermal resistance, ? junction to case per leg r thjc --5 c/w thermal resistance, ? junction to ambient per leg r thja --50 thermal resistance, ? case to heatsink r thcs mounting surface, flat, smooth and greased - 0.5 - weight -2.0- g -0.07- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style to-263ab (d 2 pak) murb1020cth case style to-262aa murb1020ct-1h i f - instantaneous forward current (a) v f - forward voltage drop (v) 0.2 0.4 0.8 1.2 0.6 1.0 1.4 1.6 0.1 1 100 10 t j = 175 c t j = 125 c t j = 25 c i r - reverse current (a) v r - reverse voltage (v) 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 100 t j = 125 c t j = 175 c t j = 150 c t j = 100 c t j = 25 c
VS-MURB1020CTHM3, vs-murb1020ct-1hm3 www.vishay.com vishay semiconductors revision: 02-feb-16 3 document number: 95807 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics c t - junction capacitance (pf) v r - reverse voltage (v) 1 10 100 1000 1 100 10 t j = 25 c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) 1 s ingle pul s e (thermal re s i s tance) d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 p dm t 2 t 1 note s : 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c allowable case temperature (c) i f(av) - average forward current (a) 6 4 2 8 0 170 180 130 150 160 140 sq uare wave (d = 0.50) rated v r applied s ee note (1) dc average power loss (w) i f(av) - average forward current (a) 46 57 3 2 1 8 0 6 7 0 2 4 3 5 1 d = 0.01 d = 0.02 d = 0.05 d = 0.10 d = 0.20 d = 0.50 dc rm s limit
VS-MURB1020CTHM3, vs-murb1020ct-1hm3 www.vishay.com vishay semiconductors revision: 02-feb-16 4 document number: 95807 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; ? pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); ? pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r ? ? ? fig. 9 - reverse recovery waveform and definitions t rr (ns) di f /dt (a/s) 100 1000 10 50 20 40 30 v r = 160 v t j = 125 c t j = 25 c i f = 10 a i f = 5 a q rr (nc) di f /dt (a/s) 100 1000 0 160 120 40 20 60 80 140 100 i f = 10 a i f = 5 a v r = 160 v t j = 125 c t j = 25 c q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
VS-MURB1020CTHM3, vs-murb1020ct-1hm3 www.vishay.com vishay semiconductors revision: 02-feb-16 5 document number: 95807 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description VS-MURB1020CTHM3 50 1000 antistatic plastic tube vs-murb1020ct-1hm3 50 1000 antistatic plastic tube vs-murb1020ctlhm3 800 800 13 " diameter reel vs-murb1020ctrhm3 800 800 13 " diameter reel links to related documents dimensions to-263ab (d 2 pak) www.vishay.com/doc?95046 to-262aa www.vishay.com/doc?95419 part marking information to-263ab (d 2 pak) www.vishay.com/doc?95444 to-262aa www.vishay.com/doc?95443 packaging information to-263ab (d 2 pak) www.vishay.com/doc?95032 2 - ultrafast mur series 3 - b = d 2 pak/to-262 4 - current rating (10 = 10 a) 5 - voltage rating (20 = 200 v) 6 - ct = center tap (dual) - h = aec-q101 qualified 7 - none = d 2 pak -1 = to-262 m3 = halogen-free, rohs-compliant, and terminations lead(pb)-free 9 - environmental digit: 10 8 - none = tube (50 pieces) l = tape and reel (left oriented, for d 2 pak package) r = tape and reel (right oriented, for d 2 pak package) device code 5 1 3 2 4 6 7 8 9 10 vs- mur b 10 20 ct -1 l h m3 1 - vishay semiconductors product
outline dimensions www.vishay.com vishay semiconductors revision: 08-jul-15 1 document number: 95046 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 d 2 pak dimensions in millimeters and inches notes (1) dimensioning and tolerancing per asme y14.5 m-1994 (2) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outmost extremes of the plastic body (3) thermal pad contour optional with in dimension e, l1, d1 and e1 (4) dimension b1 and c1 a pply to base metal only (5) datum a and b to be dete rmined at datum plane h (6) controlling dimension: inch (7) outline conforms to jedec ? outline to-263ab symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.06 4.83 0.160 0.190 d1 6.86 8.00 0.270 0.315 3 a1 0.00 0.254 0.000 0.010 e 9.65 10.67 0.380 0.420 2, 3 b 0.51 0.99 0.020 0.039 e1 7.90 8.80 0.311 0.346 3 b1 0.51 0.89 0.020 0.035 4 e 2.54 bsc 0.100 bsc b2 1.14 1.78 0.045 0.070 h 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 4 l 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 l1 - 1.65 - 0.066 3 c1 0.38 0.58 0.015 0.023 4 l2 1.27 1.78 0.050 0.070 c2 1.14 1.65 0.045 0.065 l3 0.25 bsc 0.010 bsc d 8.51 9.65 0.335 0.380 2 l4 4.78 5.28 0.188 0.208 c b detail a c2 a a a 0.004 b m a lead tip (3) (3) view a - a (e) (d1) e1 b h a1 detail ?a? rotated 90 cw scale: 8 :1 l gauge plane 0 to 8 l3 l4 seating plane section b - b and c - c scale: none (4) (4) ( b , b 2) b 1, b 3 (c) c1 base metal plating conforms to jedec ? outline d 2 pak (smd-220) 13 2 d c a l2 e (2)(3) (2) 4 h bb 2 x b 2 x b 2 l1 0.010 a b m m (3) e 2 x pad layout min. 11.00 (0.43) min. 9.65 (0.3 8 ) min. 3. 8 1 (0.15) min. 2.32 (0.0 8 ) 17.90 (0.70) 15.00 (0.625) 2.64 (0.103) 2.41 (0.096)
document number: 95419 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 04-oct-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-262 outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and toleranci ng as per asme y14.5m-1994 (2) dimension d and e do not include mold flash. mold flash shall not exceed 0.127 mm (0.005") pe r side. these di mensions are measured at the outmost e xtremes of th e plastic body (3) thermal pad contour optional with in dimension e, l1, d1 and e1 (4) dimension b1 and c1 a pply to base metal only (5) controlling dime nsion: inches (6) outline conform to jedec to- 262 except a1 (maximum), b (minimum) and d1 (minimum) where dimensions derived the actual package outline symbol millimeters inches notes min. max. min. max. a 4.06 4.83 0.160 0.190 a1 2.03 3.02 0.080 0.119 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 4 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 4 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 4 c2 1.14 1.65 0.045 0.065 d 8.51 9.65 0.335 0.380 2 d1 6.86 8.00 0.270 0.315 3 e 9.65 10.67 0.380 0.420 2, 3 e1 7.90 8.80 0.311 0.346 3 e 2.54 bsc 0.100 bsc l 13.46 14.10 0.530 0.555 l1 - 1.65 - 0.065 3 l2 3.56 3.71 0.140 0.146 (4) (4) base metal plating b1, b3 (b, b2) c1 c section b - b and c - c scale: none section a - a (3) e1 (3) d1 e b a a a c2 c a1 seating plane lead tip (3) (2) (3) (2) a e (datum a) l1 l2 b b c c 3 2 1 l d 2 x e 3 x b2 3 x b 0.010 a b mm modified jedec outline to-262 lead assignments diodes 1. - anode (two die)/open (one die) 2., 4. - cathode 3. - anode
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